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ANISOTROPIC PLASMA ETCHING OF SEMICONDUCTOR MATERIALSPARRY PD; RODDE AF.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 4; PP. 125-132; BIBL. 37 REF.Article

CF₄ ETCHING IN A DIODE SYSTEMBONDUR JA.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 226-231; BIBL. 17 REF.Article

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THE EFFECT OF ADDED HYDROGEN ON THE RF DISCHARGE CHEMISTRY OF CF₄, CF₃H, AND C₂F₆TRUESDALE EA; SMOLINSKY G.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6594-6599; BIBL. 15 REF.Article

THE ROLES OF IONS AND NEUTRAL ACTIVE SPECIES IN MICROWAVE PLASMA ETCHINGSUZUKI K; OKUDAIRA S; KANOMATA I et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1024-1028; BIBL. 10 REF.Article

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FINE FREQUENCY TUNING OF A HIGH POWER CO₂ LASER AND ITS APPLICATION TO OPTICALLY-PUMPED MOLECULAR LASERSSTAMATAKIS T; GREEN JM.1979; OPT. COMMUNIC.; NLD; DA. 1979; VOL. 30; NO 3; PP. 413-418; BIBL. 10 REF.Article

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MEASUREMENTS AND MECHANISMS OF ETCHANT PRODUCTION DURING THE PLASMA OXIDATION OF CF₄ AND C₂F₆FLAMM DL.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 4; PP. 109-116; BIBL. 29 REF.Article

THE VAPOUR PRESSURE OF TETRAFLUOROMETHANELOBO LQ; STAVELEY LAK.1979; CRYOGENICS; GBR; DA. 1979; VOL. 19; NO 6; PP. 335-338; BIBL. 37 REF.Article

PLASMA ETCHING OF SI AND SIO₂ - THE EFFECT OF OXYGEN ADDITIONS TO CF₄ PLASMASMOGAB CJ; ADAMS AC; FLAMM DL et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 7; PP. 3796-3803; BIBL. 19 REF.Article

THE VERSATILE TECHNIQUE OF RF PLASMA ETCHING. III. MECHANISTIC CONSIDERATIONS FOR SELECTIVE ETCHING.JACOB A.1978; SOLID STATE TECHNOL.; U.S.A.; DA. 1978; VOL. 21; NO 4; PP. 95-121 (5P.); BIBL. 7 REF.Article

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ETUDE EXPERIMENTALE DE LA CONDUCTIVITE THERMIQUE DES FREONS F-13 ET F-14 ET DE LEUR MELANGE A BASSE TEMPERATUREZAPOROZHAN GV; GELLER VZ.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 5; PP. 1056-1059; BIBL. 8 REF.Article

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